NTGS3446
14
V GS = 2.6 V
V GS = 2.2 V
T J = 25 ° C
14
V DS w 10 V
12
12
10
V GS = 5 V
10
8
6
4
V GS = 10 V
V GS = 2 V
V GS = 1.8 V
8
6
4
2
V GS = 1.6 V
2
T J = 125 ° C
T J = 25 ° C
0
0
1
2
3
4
V GS = 1.4 V
5 6 7
8
9
10
0
0
1
T J = ? 55 ° C
2
3
4
5
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 1. On ? Region Characteristics
V GS , GATE ? TO ? SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.11
0.085
0.06
I D = 3.3 A
T J = 25 ° C
0.06
0.05
0.04
T J = 25 ° C
V GS = 2.5 V
V GS = 5.5 V
0.03
0.035
0.02
0.01
1
2
3
4
5
6
0.01
2
3
4
5
6
7
8
9
10
1.6
V GS , GATE ? TO ? SOURCE VOLTAGE (V)
Figure 3. On ? Resistance versus
Gate ? To ? Source Voltage
1000
I D , DRAIN CURRENT (A)
Figure 4. On ? Resistance versus Drain Current
and Gate Voltage
1.4
I D = 3.25 A
V GS = 4.5 V
V GS = 0 V
T J = 150 ° C
1.2
100
1
0.8
T J = 100 ° C
0.6
? 50
? 25
0
25
50
75
100
125
150
10
2
4
6
8
10
12
14
16
18
20
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 6. Drain ? to ? Source Leakage Current
versus Voltage
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相关代理商/技术参数
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NTGS3447PT1G 功能描述:MOSFET P-CH 12V 3.4A 6-TSOP RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
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